Si/SiGe HBT differential impulse generator for high-speed UWB applications

被引：4
|
作者：
Lin, D. [1 ]
Trasser, A. [1 ]
Schumacher, H. [1 ]
机构：
[1] Univ Ulm, Inst Electron Devices & Circuits, Ulm, Germany
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 24期
关键词：
PULSE-GENERATOR; TRANSMITTER;
D O I：
10.1049/el.2010.2299
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low power, fully-integrated heterojunction bipolar transistor (HBT) differential ultra-wideband (UWB) impulse generator for the 3.1-10.6 GHz frequency band is presented. The impulse generator is based on a cross-coupled oscillator being rapidly turned on and off by an on-chip generated controlling signal. The generated impulses of sub-nanosecond duration have a potential output repetition rate well into the gigahertz range. The design occupies a chip size of 0.3 mm(2) including pads. The total power consumption is only 6 mW at a repetition rate of 100 MHz.
引用
收藏
页码：1634 / 1635
页数：2
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