Barrier height analysis of metal/4H-SiC Schottky contacts

被引：0
|
作者：
Itoh, A
Takemura, O
Kimoto, T
Matsunami, H
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Determination of barrier heights in Au/, Ni/, and Ti/4H-SiC Schottky structures was carried out in detail. The barrier heights were measured by current-voltage, capacitance-voltage characteristics, and internal photoemission spectroscopy. From internal photoemission spectroscopy, the most reliable Schottky barrier heights were obtained. There existed the dependence of barrier height on surface polarity of 4H-SiC (Si- and C-face). The barrier heights were 1.81 V (Au), 1.69 V (Ni), and 1.09 V (Ti) for Si-face, and 2.07 V (Au), 1.87 V (Ni), and 1.25 V (Ti) for C-face, so that the values for C-face are 0.2 similar to 0.3 V higher than those for Si-face. Besides, the ''barrier height pinning'' was not observed in metal/4H-SiC Schottky structures.
引用
收藏
页码：685 / 688
页数：4
相关论文
共 50 条
  • [21] Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
    Kang, Min-Seok
    Ahn, Jung-Joon
    Moon, Kyoung-Sook
    Koo, Sang-Mo
    NANOSCALE RESEARCH LETTERS, 2012, 7 : 1 - 8
  • [22] Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
    Min-Seok Kang
    Jung-Joon Ahn
    Kyoung-Sook Moon
    Sang-Mo Koo
    Nanoscale Research Letters, 7
  • [23] Schottky barrier lowering in 4H-SiC Schottky UV detector
    Sciuto, Antonella
    Roccaforte, Fabrizio
    Di Franco, Salvatore
    Raineri, Vito
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1215 - 1218
  • [24] Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H-SiC contacts
    Han Lin-Chao
    Shen Hua-Jun
    Liu Ke-An
    Wang Yi-Yu
    Tang Yi-Dan
    Bai Yun
    Xu Heng-Yu
    Wu Yu-Dong
    Liu Xin-Yu
    CHINESE PHYSICS B, 2014, 23 (12)
  • [25] Tungsten and tungsten nitride Schottky contacts to 4H-SiC
    Pecz, B
    Sulyok, A
    Radnoczi, G
    Noblanc, O
    Arnodo, C
    Cassette, S
    Brylinski, C
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 519 - 522
  • [26] Thermal stability of Pt Schottky contacts to 4H-SiC
    Shalish, I
    de Oliveira, CEM
    Shapira, Y
    Burstein, L
    Eizenberg, M
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 5724 - 5728
  • [27] Barrier Non-Uniformity of Annealed Ni/4H-SiC Schottky Contacts with Temperature
    Pristavu, G.
    Brezeanu, G.
    Badila, M.
    Vasilica, A.
    Pascu, R.
    2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), 2015, : 157 - 160
  • [28] Barrier inhomogeneities of platinum contacts to 4H-SiC
    Huang, Lingqin
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 : 648 - 655
  • [29] Schottky barrier height of Ni/TiO2/4H-SiC metal-insulator-semiconductor diodes
    Kaufmann, Ivan R.
    Pereira, Marcelo B.
    Boudinov, Henri I.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
  • [30] Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
    S. Toumi
    Z. Ouennoughi
    R. Weiss
    Applied Physics A, 2021, 127
12345