1.3-W ripple-free superluminescent diode

被引：18

作者：

Burrow, L ^{[1
]}

Causa, F ^{[1
]}

Sarma, J ^{[1
]}

机构：

[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 10期

关键词：

optoelectronic devices; semiconductor device modeling; superluminescent diodes (SLDs);

D O I：

10.1109/LPT.2005.853027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the experimental characterization of tapered and stripe superluminescent diodes fabricated from 980-mn high-power triple quantum-well InGaAs-AlGaAs semiconductor material. Record output powers in excess of 1.3 W pulsed have been measured, with 0.1-dB spectral modulation and maximum wall-plug efficiency 16%. Almost 1-W optical power into multimode optical fibers has been achieved with preliminary measurements of coupling efficiency.

引用

页码：2035 / 2037

页数：3

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