Multi-kV Class β-Ga2O3 MESFETs With a Lateral Figure of Merit Up to 355 MW/cm2

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) beta-Ga2O3 lateral MESFETs with high lateral figures of merit (LFOM) usingmetalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 Omega.mm can be achieved. The GPFP design adopted here using plasma-enhanced chemical vapor deposited (PECVD) SiNx dielectric and SiNx/SiO2 wrap-around passivation exhibits up to similar to 14% improved R-ON, up to similar to 70% improved breakdown voltage (V-BR = V-DS - V-GS) resulting in up to 3x higher LFOM compared to the non-FP beta-Ga2O3 lateral MESFETs. The V-BR (similar to 2.5 kV) and LFOM (355 MW/cm(2)) measured simultaneously in our GPFP beta-Ga2O3 lateral MESFET (with L-GD = 10 mu m) is the highest value achieved in any depletion-mode beta-Ga2O3 lateral device to date.