Monolithic Integration of GaN-based LEDs

被引：6
|
作者：
Ao, Jin-Ping [1 ]
机构：
[1] Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan
来源：
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010) | 2011年 / 276卷
关键词：
LIGHT-EMITTING DIODE; CHIP;
D O I：
10.1088/1742-6596/276/1/012001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.
引用
收藏
页数：4
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