FIRST-PRINCIPLES STUDY ON Ge1-XSnX-Si CORE-SHELL NANOWIRE TRANSISTORS

被引：0

作者：

Gu, Zeguo ^{[1
]}

Xu, Feng ^{[1
]}

Gao, Bin ^{[1
]}

Wu, Huaqiang ^{[1
]}

Qian, He ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The compositional dependence of electronic band structure in relaxed and biaxially strained Ge1-xSnx alloy is investigated with the first principles method. Based on energy band dispersion along the [100] crystal orientation, hole effective mass is extracted via parabolic line fit. Calculation results indicate Sn composition dependence of the hole effective mass for relaxed alloy is much less pronounced than biaxially strained alloy. And then the electronic structure of Ge1-xSnx-Si core-shell nanowire along the [110] direction is studied from first-principles calculation.

引用

页数：4

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