Strain Evaluation of Laser-annealed SiGe Thin Layers

SiGe channel is widely used because carrier mobilities of SiGe are higher than those of Si. C or Ge ion implantation in the source/drain region is expected to be effective to induce tensile or compressive strain, respectively, in the SiGe channel. Laser annealing enables to remove lattice damage efficiently with minimum thermal budget. In this study, laser-annealed SiGe thin layers with and without C or Ge implantation were evaluated by Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). We demonstrated the effect of C or Ge implantation as well as Ge redistribution by the laser annealing on the Raman peak shift.