Evaluation of the Crystallinity of Grain Boundaries of Electronic Copper Thin Films for Highly Reliable Interconnections

被引：0
|
作者：
Saito, Naoki [1 ]
Murata, Naoakzu [1 ]
Tamakawa, Kinji [1 ]
Suzuki, Ken [1 ]
Miura, Hideo [1 ]
机构：
[1] Tohoku Univ, Fracture & Reliabil Res Inst, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2012年
关键词：
ELECTROPLATED-COPPER;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The change of the crystallinity of grain boundaries of the electroplated copper thin films used for the various interconnections in electronic products was evaluated quantitatively by applying an electron back-scattering diffraction analysis. It was found that the crystallinity of the electroplated films varied drastically depending on the electroplating conditions such as the composition of solute, temperature of the plating, the current density during electroplating, the surface material on the substrate, and so on. It also changed after the annealing at temperatures higher than 200 degrees C. The change of the crystallinity of the films caused the drastic variation of both the electrical and mechanical reliability of the films.
引用
收藏
页码：1153 / 1158
页数：6
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