Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor

被引:19
|
作者
Fu, Yafei [1 ]
Sun, Jie [2 ]
Du, Zaifa [1 ]
Guo, Weiling [1 ]
Yan, Chunli [3 ]
Xiong, Fangzhu [1 ]
Wang, Le [1 ]
Dong, Yibo [1 ]
Xu, Chen [1 ]
Deng, Jun [1 ]
Guo, Tailiang [2 ]
Yan, Qun [2 ]
机构
[1] Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[2] Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Fujian, Peoples R China
[3] Lib Fuzhou Univ, Dept Informat & Automat, Fuzhou 350116, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
GaN micro-light-emitting diodes; two-dimensional materials; graphene; field effect transistors; monolithic integration; HIGH BREAKDOWN VOLTAGE; HEMTS;
D O I
10.3390/ma12030428
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called massive transfer, which is arguably the largest obstacle preventing the commercialization of micro-LEDs. We combined GaN devices with emerging graphene transistors and for the first-time designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a graphene FET connected in series. The p-electrode of the micro-LED was connected to the source of the driving transistor. The FET was used to tune the work current in the micro-LED. Meanwhile, the transparent electrode of the micro-LED was also made of graphene. The operation of the device was demonstrated in room temperature conditions. This research opens the gateway to a new field where other two-dimensional (2D) materials can be used as FET channel materials to further improve transfer properties. The 2D materials can in principle be grown directly onto GaN, which is reproducible and scalable. Also, considering the outstanding properties and versatility of 2D materials, it is possible to envision fully transparent micro-LED displays with transfer-free active matrices (AM), alongside an efficient thermal management solution.
引用
收藏
页数:8
相关论文
共 33 条
  • [31] Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications
    Xiong, Fangzhu
    Guo, Weiling
    Feng, Shiwei
    Li, Xuan
    Du, Zaifa
    Wang, Le
    Deng, Jun
    Sun, Jie
    MATERIALS, 2019, 12 (21)
  • [32] Wafer-scale monolithic hybrid integration of Si-based IC and III-V epi-layersA mass manufacturable approach for active matrix micro-LED micro-displays
    Zhang, Lei
    Ou, Fang
    Chong, Wing Cheung
    Chen, Yijing
    Li, Qiming
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2018, 26 (03) : 137 - 145
  • [33] Active Control of Temperature-Sensitive GaN-Graphene van der Waals Heterojunctions Integrated Metasurfaces: A Platform for Multifunctional Micro-Nanophotonic Devices
    Wu, G. F.
    Yan, F. P.
    Liang, L. J.
    Wang, W.
    Li, T.
    Li, Z. H.
    Yan, X.
    Zhang, R.
    Yao, H. Y.
    Wang, Z. Q.
    Hu, X. F.
    Wang, L.
    ADVANCED OPTICAL MATERIALS, 2024, 12 (29):