Effect of Laser Fluence on the Properties of Microstructured Silicon Solar Cells

被引：5

作者：

Liu, Dewei ^{[1
,2
,3
]}

Huang, Yongguang ^{[1
]}

Zhu, Xiaoning ^{[1
]}

Wang, Xiyuan ^{[1
]}

Chen, Minghua

Zhu, Hongliang ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[3] Zhengzhou Univ Light Ind, Dept Tech & Phys, Zhengzhou 450002, Peoples R China

来源：

2011 INTERNATIONAL CONFERENCE ON PHYSICS SCIENCE AND TECHNOLOGY (ICPST) | 2011年 / 22卷

关键词：

Solar cells; Picosecond laser; Laser fluence; Microstructured silicon; Laser doping; INFRARED-ABSORPTION; FEMTOSECOND; PICOSECOND;

D O I：

10.1016/j.phpro.2011.11.072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface of silicon wafers was irradiated with ultrafast picosecond laser pulses in the presence of SF6 at a fluence of 0.3 J/cm(2), 0.4 J/cm(2) and 0.5 J/cm(2), respectively. And three microstructured surfaces doped with sulfur were obtained and applied to solar cells. The effect of laser fluence on the properties of cells is investigated. The result shows that the parameters of cells irradiated with the fluence of 0.4 J/cm(2) are the best. The FF, P-m, and E-ff of cells irradiated with the fluence of 0.3 J/cm(2) are superior to that of cells irradiated with the fluence of 0.5 J/cm(2) although I-SC and V-OC are lower. The parasitic resistance is analyzed to explain the higher FF of the cells irradiated with the fluence of 0.3 J/cm(2). And the surface morphology of microstructured silicon was characterized by SEM. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee.

引用

页码：464 / 470

页数：7

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