Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

被引：27

作者：

Sharma, Parikshit Pratim ^{[1
]}

Albisetti, Edoardo ^{[1
]}

Monticelli, Marco ^{[1
]}

Bertacco, Riccardo ^{[1
]}

Petti, Daniela ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Fis, Via Giuseppe Colombo 81, I-20133 Milan, Italy

来源：

SENSORS | 2016年 / 16卷 / 07期

关键词：

magnetic tunneling junction; magnetoresistive sensors; exchange bias; IrMn; blocking temperature; field cooling; MAGNETIC SENSORS; SPIN-VALVE; DEPENDENCE; BIOSENSORS; THICKNESS; JUNCTIONS;

D O I：

10.3390/s16071030

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The fine control of the exchange coupling strength and blocking temperature of exchange bias systems is an important requirement for the development of magnetoresistive sensors with two pinned electrodes. In this paper, we successfully tune these parameters in top-and bottom-pinned systems, comprising 5 nm thick Co40Fe40B20 and 6.5 nm thick Ir22Mn78 films. By inserting Ru impurities at different concentrations in the Ir22Mn78 layer, blocking temperatures ranging from 220 degrees C to 100 degrees C and exchange bias fields from 200 Oe to 60 Oe are obtained. This method is then applied to the fabrication of sensors based on magnetic tunneling junctions consisting of a pinned synthetic antiferromagnet reference layer and a top-pinned sensing layer. This work paves the way towards the development of new sensors with finely tuned magnetic anisotropies.

引用

页数：11

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