A 330 GHz Frequency Modulator using 0.13-μm SiGe HBTs

被引：0
|
作者：
Li, Yihu [1 ,2 ]
Xiong, Yong-Zhong [2 ]
Goh Wang-Ling [1 ]
机构：
[1] Nanyang Technol Univ, Singapore, Singapore
[2] CAEP, Terahertz Res Ctr, Semicond Device Res Lab, Chengdu 611731, Peoples R China
来源：
2014 14TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC) | 2014年
关键词：
frequency modulator; cascaded; Gilbert cell; SiGe BiCMOS; output spectrums; TRANSCEIVER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 330 GHz frequency modulator. 82.5 GHz input signal is modulated by a Gilbert cell and the modulated signal is converted to 330 GHz via two cascaded push-push frequency doublers. Stacked push-push configuration is used for enhancing the output power at 330 GHz and passive Baluns with asymmetrical grounding stub is deployed to improve the power efficiency. The proposed design is fabricated using 0.13-mu m SiGe BiCMOS process. The total chip area is 0.95 mmx1 mm. The DC consumption is 42.5 mW including the buffers and the input power of the 82.5 GHz carrier is -8 dBm. The proposed design demonstrates good input/output return losses through on-chip measurement and the modulated output spectrums are obtained at 330 GHz.
引用
收藏
页码：288 / 291
页数：4
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