Development of mid-wave 320x256 infrared focal plane array in Korea

被引：2

作者：

Choi, Jong-Hwa ^{[1
]}

Kim, Sun Ho ^{[1
]}

Kim, Chi Yeon ^{[1
]}

Kim, Jae Won ^{[1
]}

Kim, Nam Hwan ^{[1
]}

Park, Seung-Man ^{[1
]}

Bae, Soo-Ho ^{[2
]}

Kim, Young-Ho ^{[2
]}

Kim, Byung-Hyuk ^{[2
]}

Jeoung, Min-Suk ^{[2
]}

Jung, Han ^{[2
]}

机构：

[1] Agcy Def Dev, Yuseong POB 35-5, Taejon 305600, South Korea

[2] i3System, Daejeon 305343, South Korea

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXIII | 2007年 / 6542卷

关键词：

HgCdTe; photodiode; readout integrated circuit; indium bump; flip-chip bonding; underfill; reliability;

D O I：

10.1117/12.719120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the development of mid-wave 320x256 HgCdTe IRFPA with 30 mu m pixel pitch since 2002 in Korea. All key technologies such as HgCdTe photodiode array fabrication process, the design of silicon readout integrated circuit and hybridization process between HgCdTe photodiode array and ROIC including underfill encapsulation process are studied and realized. The fabricated IRFPA shows good electro-optical performances such as operability over 99%, NETD of similar to 17mK and there is no degradation in the operability during 500 thermal cycles.

引用

页数：8

共 50 条

[41] Indigenous development of 320 x 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imaging
Kumari, K. C. Goma
Ghadi, H.
Samudraiah, D. R. M.
Chakrabarti, S.
CURRENT SCIENCE, 2017, 112 (07): : 1568 - 1573
[42] 320×256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai
200083, China
Hongwai Yu Haomibo Xuebao, 6 (716-720): : 716 - 720
[43] 256X256 HYBRID HGCDTE INFRARED FOCAL PLANE ARRAYS
BAILEY, RB
KOZLOWSKI, LJ
CHEN, J
BUI, DQ
VURAL, K
EDWALL, DD
GIL, RV
BENVANDERWYCK, A
GERTNER, ER
GUBALA, MB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (05) : 1104 - 1109
[44] 320x256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise
Ma, Yingjie
Li, Xue
Shao, Xiumei
Deng, Shuangyan
Cheng, Jifeng
Gu, Yi
Liu, Yage
Chen, Yu
Zhu, Xianliang
Li, Tao
Zhang, Yonggang
Gong, Haimei
Fang, Jiaxiong
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 28 (02)
[45] AlxGa1-xN-based deep-ultraviolet 320 x 256 focal plane array
Cicek, Erdem
Vashaei, Zahra
Huang, Edward Kwei-wei
McClintock, Ryan
Razeghi, Manijeh
OPTICS LETTERS, 2012, 37 (05) : 896 - 898
[46] High-efficiency low-crosstalk dielectric metasurfaces of mid-wave infrared focal plane arrays
Akin, Onur
Demir, Hilmi Volkan
APPLIED PHYSICS LETTERS, 2017, 110 (14)
[47] 320 x 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice
Sun, Yaoyao
Wang, Guowei
Han, Xi
Xiang, Wei
Jiang, Dongwei
Jiang, Zhi
Hao, Hongyue
Lv, Yuexi
Guo, Chunyan
Xu, Yingqiang
Niu, Zhichuan
SUPERLATTICES AND MICROSTRUCTURES, 2017, 111 : 783 - 788
[48] Demonstration of 1Kx1K Long-wave and Mid-wave Superlattice Infrared Focal Plane Arrays
Gunapala, S. D.
Ting, D. Z.
Hill, C. J.
Nguyen, J.
Soibel, A.
Rafol, S. B.
Keo, S. A.
Mumolo, J. M.
Lee, M. C.
Liu, J. K.
Yang, B.
Liao, A.
INFRARED REMOTE SENSING AND INSTRUMENTATION XVIII, 2010, 7808
[49] Uncooled Mid-wave Infrared Focal Plane Array Using Band Gap Engineered Mercury Cadmium Telluride Quantum Dot Coated Silicon ROIC
Chatterjee, Abhijit
Pendyala, Naresh Babu
Jagtap, Amardeep
Rao, K. S. R. Koteswara
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2019, 17 : 95 - 100
[50] LWIR 256 x 256 HgCdTe focal plane array operating at 88 K
Destefanis, G
Audebert, P
Mottin, E
Rambaud, P
JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1288 - 1292

← 1 2 3 4 5 →