Development of mid-wave 320x256 infrared focal plane array in Korea

被引：2

作者：

Choi, Jong-Hwa ^{[1
]}

Kim, Sun Ho ^{[1
]}

Kim, Chi Yeon ^{[1
]}

Kim, Jae Won ^{[1
]}

Kim, Nam Hwan ^{[1
]}

Park, Seung-Man ^{[1
]}

Bae, Soo-Ho ^{[2
]}

Kim, Young-Ho ^{[2
]}

Kim, Byung-Hyuk ^{[2
]}

Jeoung, Min-Suk ^{[2
]}

Jung, Han ^{[2
]}

机构：

[1] Agcy Def Dev, Yuseong POB 35-5, Taejon 305600, South Korea

[2] i3System, Daejeon 305343, South Korea

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXIII | 2007年 / 6542卷

关键词：

HgCdTe; photodiode; readout integrated circuit; indium bump; flip-chip bonding; underfill; reliability;

D O I：

10.1117/12.719120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the development of mid-wave 320x256 HgCdTe IRFPA with 30 mu m pixel pitch since 2002 in Korea. All key technologies such as HgCdTe photodiode array fabrication process, the design of silicon readout integrated circuit and hybridization process between HgCdTe photodiode array and ROIC including underfill encapsulation process are studied and realized. The fabricated IRFPA shows good electro-optical performances such as operability over 99%, NETD of similar to 17mK and there is no degradation in the operability during 500 thermal cycles.

引用

页数：8

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