Solution-processable dithieno[3,2-b: 2′, 3′-d] thiophene derivatives for organic thin-film transistors and complementary-like inverters

被引:25
|
作者
Ho, Dongil [1 ]
Jeon, Minseok [2 ]
Kim, Hyekyoung [1 ]
Gidron, Ori [3 ]
Kim, Choongik [1 ]
Seo, SungYong [2 ]
机构
[1] Sogang Univ, Dept Chem & Biomol Engn, Seoul 04107, South Korea
[2] Pukyong Natl Univ, Dept Chem, Busan 48513, South Korea
[3] Hebrew Univ Jerusalem, Inst Chem, IL-9190401 Jerusalem, Israel
基金
新加坡国家研究基金会;
关键词
Organic thin-film transistors; Organic semiconductor; dithieno[3,2-b: 2 ',3 '-d]thiophene; Self-assembled monolayer; Complementary-like inverter; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT PROPERTIES; CM(2) V-1 S(-1); HIGH-PERFORMANCE; N-CHANNEL; CARRIER TRANSPORT; SMALL MOLECULES; DITHIENOTHIOPHENE; SEMICONDUCTORS; DIKETOPYRROLOPYRROLE;
D O I
10.1016/j.orgel.2017.11.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solution-processable dithieno[3,2-b: 2', 3'-d] thiophene (DTT) derivatives, 2,6-bis(phenylethynyl) dithieno[3,2b: 2', 3'-d] thiophene (BP-Et-DTT) and 2,6-bis(thiophen-2-ylethynyl) dithieno[3,2-b: 2', 3'-d] thiophene (BT-Et-DTT) were synthesized and characterized as organic semiconductors for organic thin-film transistors (OTFTs). Thermal, optical, and electrochemical properties of the DTT-based semiconductors were investigated. The solution- sheared thin films based on DTT derivatives exhibited p-channel characteristics as an active layer in organic thin-film transistors. The highest hole mobility was 0.32 cm(2) V(-1)s(-1) based on BP-Et-DTT thin films. The thin films exhibited micrometer-sized crystalline fiber structures which were aligned along the shearing direction, resulting in fiber-alignment-induced charge-transport anisotropy. Furthermore, bulk heterojunction (BHJ) ambipolar transistors were fabricated with an optimized blending ratio of BP-Et-DTT and the representative n-channel semiconductor, PDIFCN2. Complementary-like inverters were fabricated based on the two identical ambipolar transistors, resulting in moderate voltage gains of up to 16.
引用
收藏
页码:356 / 363
页数:8
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