Unipolar resistive switching of EuxOy polycrystalline films

被引：5

作者：

Kim, Sanghoon ^{[1
]}

Choi, Jinsik ^{[1
]}

Park, Bae Ho ^{[1
]}

Lee, Chang-Won ^{[2
]}

Chung, JaeGwan ^{[2
]}

Seo, Sunae ^{[2
]}

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 02期

关键词：

resistive switching; EuO; thin films;

D O I：

10.3938/jkps.53.700

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polycrystallized EuxOy thin films show unipolar resistive switching. The ratios of the resistance values of the high-resistance state to those of the low-resistance state are as large as 10(8). The deposited EuxOy thin films show mixed phases, Eu2O3 and Eu3O4. The relative concentration of the phases could be controlled by using the oxygen gas flow rate during growth. A high oxygen concentration leads to broadening the distribution of the switching voltages, inducing transitions between the high-resistance state and the low-resistance state. We observe that the distribution of the switching voltage from the high-resistance state to the low-resistance state (V-SET) is smaller than or comparable to that of the switching voltage inducing the opposite transition (V-RESET) in well-controlled EuxOy thin films.

引用

页码：700 / 703

页数：4

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