Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals

被引：4
|
作者：
Porrini, M [1 ]
机构：
[1] MEMC Elect Mat, I-39012 Merano, Italy
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 10-11期
关键词：
Czochralski silicon; microdefects; antimony doping;
D O I：
10.1002/crat.200410485
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The impact of antimony doping on the formation of vacancy- and interstitial-type microdefects in Czochralski silicon is studied by growing test crystals with different Sb doping levels, in the range from 0 (undoped) to 3x10(18) cm(-3), and with different pulling rates. Antimony is found to cause a shift from interstitial- to vacancy-type microdefects, observable already at a concentration of approximate to 10(17) cm(-3). The shift coefficient K for antimony is estimated to be 7.2 x 10(-19) cm(3). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1054 / 1059
页数：6
相关论文
共 50 条
  • [21] IMPERFECTIONS IN SILICON CRYSTALS GROWN BY CZOCHRALSKI TECHNIQUE
    BENSIRA, MY
    BULLETIN OF THE RESEARCH COUNCIL OF ISRAEL, 1962, F 10 (03): : 149 - &
  • [22] Czochralski-Grown Silicon Crystals for Microelectronics
    Bukowski, A.
    ACTA PHYSICA POLONICA A, 2013, 124 (02) : 235 - 238
  • [23] FORMATION PROCESS OF OXIDE PRECIPITATES IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    SHIRAI, S
    APPLIED PHYSICS LETTERS, 1980, 36 (02) : 156 - 158
  • [24] Investigation of grown-in defect formation in Czochralski silicon crystals by optical precipitate profiler
    Kanda, Tadashi
    Hourai, Masataka
    Tomokage, Hajime
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (06):
  • [25] Investigation of grown-in defect formation in czochralski silicon crystals by optical precipitate profiler
    Kanda, T
    Hourai, M
    Tomokage, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6B): : L731 - L733
  • [26] Simulation of grown-in voids in Czochralski silicon crystals
    Dornberger, E
    Esfandyari, J
    Graf, D
    Vanhellemont, J
    Lambert, U
    Dupret, F
    vonAmmon, W
    PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 40 - 49
  • [27] Control of grown-in defects in Czochralski silicon crystals
    Hourai, M
    Kelly, GP
    Tanaka, T
    Umeno, S
    Ogushi, S
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 372 - 385
  • [28] Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals
    Puzanov, Nikolai I.
    Eidenzon, Anna M.
    Puzanov, Dmitri N.
    Furukawa, Jun
    Harada, Kazuhiro
    Ono, Naoki
    Shimanuki, Yasushi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 464 - 471
  • [29] Optimization of control parameters in microdefect Czochralski monocrystalline silicon growth
    Zhang, Jing
    Wan, Yin
    Liu, Ding
    Ren, Junchao
    2018 CHINESE AUTOMATION CONGRESS (CAC), 2018, : 2106 - 2110
  • [30] Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals
    Puzanov, NI
    Eidenzon, AM
    Puzanov, DN
    Furukawa, J
    Harada, K
    Ono, N
    Shimanuki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 464 - 471
12345