Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals

被引：4
|
作者：
Porrini, M [1 ]
机构：
[1] MEMC Elect Mat, I-39012 Merano, Italy
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2005年 / 40卷 / 10-11期
关键词：
Czochralski silicon; microdefects; antimony doping;
D O I：
10.1002/crat.200410485
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The impact of antimony doping on the formation of vacancy- and interstitial-type microdefects in Czochralski silicon is studied by growing test crystals with different Sb doping levels, in the range from 0 (undoped) to 3x10(18) cm(-3), and with different pulling rates. Antimony is found to cause a shift from interstitial- to vacancy-type microdefects, observable already at a concentration of approximate to 10(17) cm(-3). The shift coefficient K for antimony is estimated to be 7.2 x 10(-19) cm(3). (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1054 / 1059
页数：6
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