Controllable Coercive Field of Ferroelectric HfO2 UV-Ozone Surface Modification

被引：9
|
作者：
Zhang, Yan [1 ,2 ]
Wang, Dao [1 ,2 ]
Luo, Chunlai [1 ,2 ]
Cheng, Jiayun [1 ,2 ]
Huo, Siying [1 ,2 ]
Zhang, Beijing [1 ,2 ]
Tao, Ruiqiang [1 ,2 ]
Chen, Deyang [1 ,2 ]
Fan, Zhen [1 ,2 ]
Dai, Ji-Yan [3 ]
Lu, Xubing [1 ,2 ]
Liu, J-M [4 ,5 ]
机构：
[1] South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
[4] Nanjing Univ, Lab Solid State Microstruct, Nanjing 21009, Peoples R China
[5] Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 21009, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Endurance; Hf0.5Zr0.5O2 (HZO) film; surface modification; RESIDUAL-STRESS; THIN-FILMS; POLARIZATION;
D O I：
10.1109/TED.2022.3164856
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The endurance limitation related to high coercive fields (E-c) has been one of the substantial challenges to future memory applications of ferroelectric HfO2 films. In this work, we demonstrate a simple, efficient, and accurate method to regulate the E-c value of Hf0.5Zr0.5O2 (HZO) films via interface modification through ultraviolet-ozone (UV-O-3) irradiation on the surface of bottom electrode. Growth behaviors and ferroelectricity of HZO films were systematically investigated by varying UV-O-3 irradiation time. HZO samples show a well-controlled E-c upon a suitable UV-O-3 irradiation time. Compared with the w/o sample, the E-c value of 30-min irradiated sample drops by similar to 29.5%, and a comparatively high 2P(r) of 28.6 mu C/cm(2) remains. The tuning of E-c is clarified to be due to the ratio change of orthogonal and tetragonal phases in HZO films, which can be well controlled by the change of surface energy of the bottom electrode via varying the UV-O-3 irradiation time.
引用
收藏
页码：3094 / 3099
页数：6
相关论文
共 50 条
  • [41] Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
    Chen, Shih-Chang
    Chen, Yung-Yu
    Chang, Yu-Tzu
    Lou, Jen-Chung
    Kin, Kon-Tsu
    Chien, Chao-Hsin
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 1898 - 1901
  • [42] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications
    Jeong, Jiae
    Park, Hyoungjin
    Kim, Nayeon
    Kim, Hyun Wook
    Hong, Eunryeong
    Choi, Hyeonsik
    Jeon, Seonuk
    Kim, Yunsur
    Woo, Jiyong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3981 - 3984
  • [43] Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction
    Mikheev, V
    Chouprik, A.
    Lebedinskii, Yu
    Zarubin, S.
    Markeev, A. M.
    Zenkevich, A., V
    Negrov, D.
    NANOTECHNOLOGY, 2020, 31 (21)
  • [44] UV-ozone modification of plasma-polymerised acetonitrile films for enhanced cell attachment
    Davidson, MR
    Mitchell, SA
    Bradley, RH
    COLLOIDS AND SURFACES B-BIOINTERFACES, 2004, 34 (04) : 213 - 219
  • [45] Surface inhomogeneities and coercive field of thin ferroelectric films
    Lebedev, N.I.
    Sigov, A.S.
    Integrated Ferroelectrics, 1994, 4 (01) : 21 - 24
  • [46] Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
    Dahan, Mor Mordechai
    Mulaosmanovic, Halid
    Levit, Or
    Duenkel, Stefan
    Beyer, Sven
    Yalon, Eilam
    NANO LETTERS, 2023, 23 (04) : 1395 - 1400
  • [47] Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films
    Grimley, Everett D.
    Schenk, Tony
    Sang, Xiahan
    Pesic, Milan
    Schroeder, Uwe
    Mikolajick, Thomas
    LeBeau, James M.
    ADVANCED ELECTRONIC MATERIALS, 2016, 2 (09):
  • [48] Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO2 Films
    Schroeder, Uwe
    Slesazeck, Stefan
    Mulaosmanovic, Halid
    Mikolajick, Thomas
    FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION, 2020, 131 : 79 - 96
  • [49] Impact of lanthanum on the modification of HfO2 films structure
    Smirnova, T. P.
    Yakovkina, L. V.
    Borisov, V. O.
    JOURNAL OF RARE EARTHS, 2015, 33 (08) : 857 - 862
  • [50] Polarization switching in thin doped HfO2 ferroelectric layers
    Materano, Monica
    Lomenzo, Patrick D.
    Mulaosmanovic, Halid
    Hoffmann, Michael
    Toriumi, Akira
    Mikolajick, Thomas
    Schroeder, Uwe
    APPLIED PHYSICS LETTERS, 2020, 117 (26)
12345