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- [1] Enhanced Performance for OTFT on Glass with HfO2 as Gate Dielectric by UV-Ozone Treatment 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 513 - +
- [3] Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (06):
- [6] Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability ADVANCED PHYSICS RESEARCH, 2023, 2 (09):