Formation of High-Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing Using Thermal Plasma Jet for Floating Gate Memory

被引：2
|
作者：
Makihara, Katsunori [1 ]
Matsumoto, Kazuya [2 ]
Yamane, Masato [2 ]
Okada, Tatsuya [3 ]
Morisawa, Naoya [2 ]
Ikeda, Mitsuhisa [2 ]
Higashi, Seiichiro [2 ]
Miyazaki, Seiichi [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[2] Hiroshima Univ, Grad Sch Adv Sci Matter, Hiroshima 7398530, Japan
[3] Univ Ryukyus, Fac Engn, Okinawa 9030213, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期
关键词：
SELF-ASSEMBLING FORMATION; CRYSTALLIZATION TECHNIQUE; QUANTUM DOTS; TEMPERATURE; OXIDE; NANOCRYSTALS; FABRICATION; OPERATION; SURFACE; FILMS;
D O I：
10.1143/JJAP.50.08KE06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We formed nanometer-scale Pt dots on SiO2 by thermal plasma jet (TPJ) irradiation and demonstrated the feasibility of TPJ millisecond annealing for controlling the areal density of the dots. 2-10-nm-thick Pt/quartz was exposed to an Ar plasma jet at peak temperatures of 455-695 degrees C for a duration of 1-2 ms. When the Pt/quartz was annealed by TPJ irradiation without any extra heating, the Pt nanodot density was controlled in the range of 7.8 x 10(10) to 2.0 x 10(11) cm(-2) by changing the annealing temperature and the number of irradiations. These results imply that ultra-rapid annealing using a TPJ plays an important role in enhancing the surface migration of Pt atoms in order to reduce the interface energy of Pt/quartz. (C) 2011 The Japan Society of Applied Physics
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页数：4
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