A High Power-Density Three-Phase Inverter Adopting the Double-End Sourced Power Module Layout

This paper proposes a double-end sourced layout for wire-bonded multi-chip paralleled silicon carbide power modules. The simulation results demonstrate suppressed voltage-overshoot and improved current-sharing with the proposed layout, as well as reduced total switching losses and a more even loss-distribution among paralleling devices. Power modules were fabricated in the lab, a double-pulse test and continuous power test were conducted, whose outcomes verified the simulation results. Furthermore, this paper investigates and compares the thermal management on the proposed layout and the conventional baseline layout. It proves that the proposed structure has a smaller footprint on the heatsink under the same thermal requirements. Finally, a high power-density three-phase inverter that adopts the proposed structure was designed and tested.