Thermal stability performance of metamorphic high electron mobility transistors (MHEMTs)

被引：0
|
作者：
Chen, L. Y.
Chu, K. Y.
Chen, T. P.
Hung, C. W.
Tsai, T. H.
Chen, L. A.
Cheng, S. Y.
Liu, W. C.
机构：
来源：
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
IMPACT IONIZATION; HEMTS; GAAS; RATES; MODEL;
D O I：
10.1109/EDSSC.2007.4450227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal stability performance of double delta-doped In0.4Al0.58As/In0.46Ga0.54As metamorphic high electron mobility transistors with Au and Ti/Au metal gates are comprehensively studied and demonstrated. By evaporating the Ti/Au metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (An). Experimentally, the device with a Ti/Au metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mV/K), breakdown voltage (-34 mV/K), impact ionization-induced gate current (1.63x10(-3) mu A/mm center dot K), output conductance (1.23 mu S/mm K), and voltage gain (-0.33 /K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a Ti/Au metal gate is a good candidate for high-speed and high-temperature applications.
引用
收藏
页码：721 / 724
页数：4
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