Millimeter-Wave Band CMOS RF Phased-Array Transceiver IC Designs for 5G Applications

被引：8

作者：

Park, H-C ^{[1
]}

Kang, D. ^{[1
]}

Lee, J. ^{[1
]}

Minn, D. ^{[1
]}

Aoki, Y. ^{[1
]}

Kim, K. ^{[1
]}

Lee, S. ^{[1
]}

Lee, D. ^{[1
]}

Kim, S. ^{[1
]}

Kim, J. ^{[1
]}

Lee, W. ^{[1
]}

Kim, C. ^{[1
]}

Park, S. ^{[1
]}

Park, J. ^{[1
]}

Suh, B. ^{[1
]}

Jang, J. ^{[1
]}

Kim, M. ^{[1
]}

Min, K. ^{[1
]}

Jeon, S. ^{[1
]}

Ryu, A-S ^{[1
]}

Kim, Y. ^{[1
]}

Lee, J. H. ^{[1
]}

Son, J. ^{[1
]}

Yang, S-G ^{[1
]}

机构：

[1] Samsung Elect, Suwon, South Korea

来源：

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2020年

关键词：

POWER-AMPLIFIERS;

D O I：

10.1109/IEDM13553.2020.9371948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, P-OUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including x64 RF phased-array ICs (total 1,024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows P-OUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and P-DC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of - 38dB (100MHz) and P-DC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <113dBm/100MHz in the 5G NR base-station system.

引用

页数：4

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