Conductance peak distributions in quantum dots at finite temperature: Signatures of the charging energy

被引:22
|
作者
Alhassid, Y [1 ]
Gokcedag, M [1 ]
Stone, AD [1 ]
机构
[1] Yale Univ, Ctr Theoret Phys, Sloane Phys Lab, New Haven, CT 06520 USA
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 12期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.58.R7524
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We derive the finite temperature conductance peak distributions and peak-to-peak correlations for quantum dots in the Coulomb blockade regime assuming the validity of random-matrix theory. The distributions are universal, depending only on the symmetry class and the temperature measured in units of the mean level spacing, a. When the temperature is comparable to Delta several resonances contribute to the same conductance peak and we find significant deviations from the previously known T much less than Delta distributions. In contrast to the T much less than Delta case, these distributions show a strong signature of the charging energy and charge quantization on the dot. [S0163-1829(98)50936-8].
引用
收藏
页码:R7524 / R7527
页数:4
相关论文
共 50 条
  • [41] Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem
    Ye, F. F.
    Ma, Y. J.
    Lv, Y.
    Jiang, Z. M.
    Yang, X. J.
    NANOSCALE RESEARCH LETTERS, 2015, 10 : 1 - 8
  • [42] Effect of chain length on the tunneling conductance of gold quantum dots at room temperature
    Vijayamohanan, K. (viji@ems.ncl.res.in), 1600, American Institute of Physics Inc. (94):
  • [43] Effect of chain length on the tunneling conductance of gold quantum dots at room temperature
    Chaki, NK
    Gopakumar, TG
    Maddanimath, T
    Aslam, M
    Vijayamohanan, K
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3663 - 3665
  • [44] Finite-temperature effects on correlation of electrons in quantum dots
    Leino, Markku
    Rantala, Tapio T.
    PHYSICA SCRIPTA, 2004, T114 : 44 - 48
  • [45] Ballistic quantum wire conductance at nonzero temperature and finite longitudinal bias
    Bagraev, NT
    Ivanov, VK
    Klyachkin, LE
    Malyarenko, AM
    Shelykh, IA
    FOURTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING, 2001, 4348 : 112 - 118
  • [46] Energy levels in spheroidal quantum dots with finite barrier heights
    Bagga, A
    Ghosh, S
    Chattopadhyay, PK
    NANOTECHNOLOGY, 2005, 16 (11) : 2726 - 2730
  • [47] Relation between barrier conductance and Coulomb blockade peak splitting for tunnel-coupled quantum dots
    Golden, JM
    Halperin, BI
    PHYSICAL REVIEW B, 1996, 53 (07): : 3893 - 3900
  • [48] Conductance distributions of one-dimensional disordered wires at finite temperature and bias voltage
    Foieri, Federico
    Jose Sanchez, Maria
    Arrachea, Liliana
    Gopar, Victor A.
    PHYSICAL REVIEW B, 2006, 74 (16)
  • [49] Finite homogeneous broadening of laser gain in quantum dots at high temperature
    Tsuchiya, H
    Miyoshi, T
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 139 - 141
  • [50] Acceptor-induced threshold energy for the optical charging of InAs single quantum dots
    Moskalenko, ES
    Karlsson, KF
    Holtz, PO
    Monemar, B
    Schoenfeld, WV
    Garcia, JM
    Petroff, PM
    PHYSICAL REVIEW B, 2002, 66 (19) : 1 - 11