InAs/GaSb Type-II Superlattice (T2SL) photodetector operating in the long wavelength infrared (LWIR) spectral domain

被引：2
|
作者：
Christol, P. [1 ]
Alchaar, R. [1 ]
Rodriguez, J. B. [1 ]
Hoglund, L. [2 ]
Naureen, S. [2 ]
von Wurtemberg, R. Marcks [2 ]
Asplund, C. [2 ]
Costard, E. [2 ]
Rouvie, A. [3 ]
Brocal, J. [3 ]
Saint-Pe, O. [3 ]
机构：
[1] Univ Montpellier, CNRS, IES, F-34000 Montpellier, France
[2] IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden
[3] Airbus Def & Space, 31 Rue Cosmonautes, F-31402 Toulouse, France
来源：
INTERNATIONAL CONFERENCE ON SPACE OPTICS-ICSO 2018 | 2018年 / 11180卷
关键词：
infrared detector; barrier structure (XBp); Type-II superlattice (T2SL); InAs/GaSb; LWIR;
D O I：
10.1117/12.2536158
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11 mu m at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature.
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页数：6
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