InAs/GaSb Type-II Superlattice (T2SL) photodetector operating in the long wavelength infrared (LWIR) spectral domain

被引：2

作者：

Christol, P. ^{[1
]}

Alchaar, R. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Hoglund, L. ^{[2
]}

Naureen, S. ^{[2
]}

von Wurtemberg, R. Marcks ^{[2
]}

Asplund, C. ^{[2
]}

Costard, E. ^{[2
]}

Rouvie, A. ^{[3
]}

Brocal, J. ^{[3
]}

Saint-Pe, O. ^{[3
]}

机构：

[1] Univ Montpellier, CNRS, IES, F-34000 Montpellier, France

[2] IRnova AB, Isafjordsgatan 22 C5, SE-16440 Kista, Sweden

[3] Airbus Def & Space, 31 Rue Cosmonautes, F-31402 Toulouse, France

来源：

INTERNATIONAL CONFERENCE ON SPACE OPTICS-ICSO 2018 | 2018年 / 11180卷

关键词：

infrared detector; barrier structure (XBp); Type-II superlattice (T2SL); InAs/GaSb; LWIR;

D O I：

10.1117/12.2536158

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this communication, we report on electrical and electro-optical characterizations of InAs/GaSb Type-II superlattice (T2SL) LWIR photodetector, showing cut-off wavelengths at 11 mu m at 77K. The devices, made of barrier structures in XBp configuration, were grown by molecular beam epitaxy (MBE) on GaSb substrate. Experimental measurements on samples were made by photoresponse spectra, by capacitance-voltage (C-V) and dark current-voltage (I-V) characteristics performed as a function of temperature.

引用

页数：6

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