Microstructure of magnetron sputtered PLZT thin films on sapphire

The microstructural development and crystal structures of sputtered PLZT 9/65/35 films on r-plane sapphire with respect to deposition/annealing conditions were studied. The films were deposited at substrate temperatures below 500 degrees C and annealed in the range 700 degrees to 730 degrees C for 1 min to 20 min for complete perovskite formation either by rapid thermal annealing (RTA) or furnace annealing (FA). The optical transparency was excellent with smooth surfaces in the stoichiometric films but reduced in the Pb-deficient films. The grain sizes in the films varied from 0.1 mu m to 0.8 mu m and 0.2 mu m to 1.2 mu m after RTA and FA respectively.