Tailoring the growth of L10-FePt for spintronics applications

被引:9
|
作者
Tahmasebi, Taiebeh [1 ,2 ]
Piramanayagam, Seidikkurippu N. [1 ]
Sbiaa, Rachid [1 ]
Tan, Hang Khume [1 ]
Law, Randall [1 ]
Lua, Sunny [1 ]
Chong, Tow Chong [1 ,2 ,3 ]
机构
[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[3] Singapore Univ Technol & Design, Singapore 138682, Singapore
来源
关键词
L1(0)-FePt; crystallography; perpendicular magnetic anisotropy; high anisotropy constant; FEPT THIN-FILMS; TEMPERATURE; SUBSTRATE; MECHANISM;
D O I
10.1002/pssr.201105379
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of seed layers on the magnetic and structural properties of FePt thin films was investigated. For the case of Cr(200) seed layer, no ordered L1(0)-FePt phase in (001) orientation was observed. The insertion of a thin MgO barrier between the Cr and FePt layers improved the perpendicular magnetization orientation of L1(0)-FePt by limiting diffusion of Cr into the FePt magnetic layer. Ordered L1(0)-FePt thin films can be developed on Pd[100] at high substrate temperature with the lattice mismatch of below 1% and therefore low roughness compared to MgO or Cr seed layers. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:426 / 428
页数:3
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