Over 500 GHz InP heterojunction bipolar transistors

被引：0

作者：

Feng, M ^{[1
]}

Hafez, W ^{[1
]}

Lai, JW ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520GHz operating at current densities over l400kA/cm(2) have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.

引用

页码：653 / 658

页数：6

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