Over 500 GHz InP heterojunction bipolar transistors

被引：0
|
作者：
Feng, M [1 ]
Hafez, W [1 ]
Lai, JW [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520GHz operating at current densities over l400kA/cm(2) have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.
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页码：653 / 658
页数：6
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