Hydrogen effusion from epitaxial ZnSe layers grown by metalorganic vapor phase epitaxy

The thermal outdiffusion of hydrogen from undoped ZnSe layers grown by metalorganic vapor phase epitaxy has been investigated. The samples were grown using dimethyl-zinc-triethylamine, di-tert.-butylselenide as precursors with hydrogen and nitrogen as carriergas. The typical atomic hydrogen concentrations of the samples is n(H) = 10(18) cm(-3), which originates from pyrolysis products of the organometallic precursors. The incorporation from the carrier gas is negligible. Control samples grown by molecular beam epitaxy in the presence of atomic and molecular hydrogen in the growth clamber showed no hydrogen incorporation. The outdiffusion process was investigated using transient effusion experiments. The experiments are explained by diffusion controlled effusion with a diffusion coefficient of D(T) = 1.4 x 10(-11) exp[-0.33(+/-0.03) eV/(k(B)T)]cm(2)/s. (C) 1998 American Institute of Physics.