Optical properties of stepped InxGa1-xAs/GaAs quantum wells

被引：2
|
作者：
D'Andrea, A [1 ]
Tomassini, N
Ferrari, L
Righini, M
Selci, S
Bruni, MR
Schiumarini, D
Simeone, MG
机构：
[1] CNR, MITER, Ist Metodol Avanzate Inorgan, I-00016 Rome, Italy
[2] CNR, Ist Struttura Mat, Rome, Italy
[3] CNR, MITER, Ist Chim Mat, I-00016 Rome, Italy
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
关键词：
excitons; polaritons; strained III-V semiconductors;
D O I：
10.1016/S0167-9317(98)00172-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study of InxGa1-xAs/InyGa1-yAs/GaAs(001) stepped quantum wells with indium composition x = 14.9% and y = 6.4% and thicknesses in the range of quasi-two-dimensional behaviour of Wannier excitons is performed. Optical spectra are compared with model calculations obtained by an accurate exciton envelope function. We point out that optical spectroscopy is a tool for studying indium diffusion in stepped wells, and this property is crucial in order to obtain second harmonic generation enhanced with respect to the bulk value. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：259 / 263
页数：5
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