Effect of Traps on Transient Bit-line Current Behavior in Word-line Stacked NAND Flash Memory with Poly-Si Body

We characterized the behavior of transient bit-line current (I-BL) during reading after giving a pre-bias (V-pre) to two different cells in 3-D stacked NAND flash memory having poly-Si body. Depending on the dominance of charge trapping in blocking dielectric or the interface between the tunneling oxide and the poly-Si body, opposite behavior was observed. To identify the cause, we systematically analyzed the capture and emission of charges in two trap sites by investigating transient I-BL behaviors during reading with various V(pre)s and fast & pulsed I-Vs. The carrier life time and trap density associated with grain size were extracted to substantiate different trap density with the vertical position of cells.