In-depth distribution of ion beam damage in SiC

被引：2
|
作者：
Sulyok, A. [1 ]
Menyhard, M. [1 ]
Malherbe, J. B. [2 ]
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[2] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
来源：
VACUUM | 2012年 / 86卷 / 06期
关键词：
Ion beam damage; Auger electron spectroscopy; SiC; Carbon enrichment; COMPOSITION GRADIENTS; HIGH FLUENCE; BOMBARDMENT; ALLOYS; IMPLANTATION; SURFACE;
D O I：
10.1016/j.vacuum.2011.07.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we report on the ion beam bombardment-induced alteration of SiC measured at different ion energies (300-1700 eV) and at wide range of incident angle (43 degrees-87 degrees). Surface roughening was reduced by sample rotation during sputtering. The change of the concentration was characterized by Auger electron spectroscopy. Both low and high energy Auger peaks of Si were detected, which allowed us to estimate the depth distribution of the components. The observed alteration of Auger peak heights will be explained by simple model of the changed in-depth distribution. The model gives an estimate for the composition of top layer (the real surface) of SIC in different sputtering conditions, as well as the in-depth distribution of Si and C. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：761 / 764
页数：4
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