The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

被引：16
|
作者：
Byeon, DS [1 ]
Chun, JH
Lee, BH
Kim, DY
Han, MK
Choi, YI
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Ajou Univ, Sch Elect Engn, Suwon 442749, South Korea
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 06期
关键词：
shorted-anode; lateral insulated gate bipolar transistor; negative differential resistance;
D O I：
10.1016/S0026-2692(98)00180-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：571 / 575
页数：5
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