Solid state pulsed power systems for plasma immersion ion implantation

被引：0

作者：

Gaudreau, MPJ ^{[1
]}

Casey, JA ^{[1
]}

Kempkes, MA ^{[1
]}

Mulvaney, JM ^{[1
]}

Hawkey, ATJ ^{[1
]}

机构：

[1] Diversified Technol Inc, Bedford, MA 01730 USA

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Diversified Technologies, Inc. (DTI) has developed and patented solid state technology to provide fast, high power switches capable of both opening and closing. These switches are modular, and can be combined in series and/or in parallel to provide a wide range of voltage, current, and power handling capabilities for Plasma Immersion Ion Implantation (PIII).

引用

页码：496 / 499

页数：4

共 50 条

[21] Plasma-immersion ion implantation
Thomae, RW
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 37 - 42
[22] Plasma immersion ion implantation of polyethylene
Kondyurin, A
Karmanov, V
Guenzel, R
VACUUM, 2001, 64 (02) : 105 - 111
[23] Plasma-immersion ion implantation
Thomae, Rainer W.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 139 (1-4): : 37 - 42
[24] Instrumentation for plasma immersion ion implantation
López-Callejas, R
Valencia-Alvarado, R
Muñoz-Castro, AE
Godoy-Cabrera, OG
Tapia-Fabela, JL
REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (12): : 4277 - 4282
[25] Plasma immersion ion implantation and deposition
You, YZ
Chun, HG
Kim, DI
Lee, JH
Cha, BC
Choi, BK
Lee, JH
Korus 2005, Proceedings, 2005, : 565 - 567
[26] Plasma-immersion ion implantation
Mantese, JV
Brown, IG
Cheung, NW
Collins, GA
MRS BULLETIN, 1996, 21 (08) : 52 - 56
[27] Shunting arc as a pulsed ion source for solid-state materials for plasma-based ion implantation
Yukimura, K
Yoshioka, K
Tani, Y
Masamune, S
SURFACE & COATINGS TECHNOLOGY, 2001, 136 (1-3): : 55 - 59
[28] Plasma immersion ion implantation model including multiple charge state
J Appl Phys, 7 (3432):
[29] Plasma immersion ion implantation model including multiple charge state
Qin, S
Chan, C
Jin, ZJ
JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3432 - 3437
[30] Solid-state pulsed power systems
Gaudreau, MPJ
Casey, J
Hawkey, T
Mulvaney, JM
Kempkes, MA
CONFERENCE RECORD OF THE 1998 TWENTY-THIRD INTERNATIONAL POWER MODULATOR SYMPOSIUM, 1998, : 160 - 163

← 1 2 3 4 5 →