Photoluminescence study of CuGaSe2 thin films grown on ZnO by MOCVD

被引：4
|
作者：
Orsal, G [1 ]
Mailly, F [1 ]
Artaud-Gillet, MC [1 ]
Duchemin, S [1 ]
机构：
[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Electron & Microoptoelect Montpellier, F-340095 Montpellier 05, France
来源：
THIN SOLID FILMS | 2001年 / 387卷 / 1-2期
关键词：
photoluminescence; CuGaSe2; thin films; MOCVD;
D O I：
10.1016/S0040-6090(00)01835-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, photoluminescence studies of CuGaSe2 thin films grown by metalorganic chemical vapor deposition on ZnO/glass substrates are presented. Generally, the emission is constituted by a large peak for which the intensity is higher for stoichiometric samples than for Cu-rich and Ga-rich thin films. The peak shifts towards higher energies upon increasing the Ga content. From the dependence on excitation intensity and temperature, the emission is identified as a donor-acceptor pair (DAP) transition. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：198 / 200
页数：3
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