Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes

被引：33
|
作者：
Yang, Jung Gil [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 03期
关键词：
InGaAs; Ka-band; MMIC; phase shifter; PIN-diode;
D O I：
10.1109/LMWC.2010.2104314
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact bias network. The fabricated InGaAs PIN MMIC phase shifter has demonstrated good performance characteristics such as a low insertion loss of less than 7.8 dB and a high P-1 dB of 21.0 dBm compared to the previous results.
引用
收藏
页码：151 / 153
页数：3
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