Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

被引:21
|
作者
Rogacheva, E. I. [1 ]
Budnik, A. V. [1 ]
Sipatov, A. Yu [1 ]
Nashchekina, O. N. [1 ]
Dresselhaus, M. S. [2 ,3 ]
机构
[1] Natl Tech Univ Kharkov Polytech Inst, UA-61002 Kharkov, Ukraine
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] MIT, Dept Phys, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
SURFACE-STATES; BI2SE3;
D O I
10.1063/1.4907319
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Delta d = (9.5 +/- 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Delta d within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators. (C) 2015 AIP Publishing LLC.
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页数:5
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