The effect of the amorphous insulator layer on conduction behaviors of the silica/indium tin oxide two-layer films

被引:5
|
作者
Kim, SW [1 ]
Shin, YW [1 ]
Bae, DS [1 ]
Lee, JH [1 ]
Kim, J [1 ]
Lee, HW [1 ]
机构
[1] Korea Inst Sci & Technol, Nanomat Res Ctr, Seoul 136791, South Korea
关键词
silicon oxide; indium tin oxide; conductivity; additive;
D O I
10.1016/S0040-6090(03)00681-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of the amorphous insulator layer on conduction behavior of spin coated silica/sputtered indium tin oxide two-layer film was studied in terms of impedance spectroscopy measurements, and current-voltage characterizatics. I-V characteristics of the two-layer films have shown that the conduction mechanism changes from direct tunneling to space-charge-limited conduction, when zinc cations are added to the silica layer. An addition of the ionic dopant leads to a large decrease in sheet resistance of the two-layer film as shown in the Cole-Cole plot. Consequently, the conductivity enhancement of the two-layer film without a reduction in transparency was achieved by the introduction of zinc cations into the amorphous silica layer. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:242 / 247
页数:6
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