K-band CMOS LNA with interference-rejection using Q-enhanced notch filter

被引：3

作者：

Wang, Sen ^{[1
]}

Huang, Bo-Zong ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 10608, Taiwan

来源：

IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 11期

关键词：

LNA; interference-rejection; CMOS; Q-enhanced inductor;

D O I：

10.1587/elex.9.938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a K-band CMOS low-noise amplifier (LNA) incorporating a Q-enhanced notch filter. The third-order notch filter composed of two capacitors and one high-Q inductor is used for low-side interference-rejection (IR). Moreover, the proposed inductor is realized by a tapped-inductor feedback topology to compensate its resistive losses with low-power consumption. The LNA is designed and implemented successfully in a standard 0.18-mu m CMOS process. The circuit consumes 10.7 mW with a chip size of 0.6 mm(2). Measured results demonstrate 10.5-dB gain, 4.7-dB NF, 16-dB input return loss, 13.5-dB output return loss, -10.5-dBm input P-1dB, and -3.6-dBm IIP3 at 23 GHz, respectively. The circuit also shows a 33.5-dB rejection level at 17.9 GHz.

引用

页码：938 / 944

页数：7

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