Transient photo-induced absorption in InGaN thin films

被引：0

作者：

Nomura, MS ^{[1
]}

Arita, M ^{[1
]}

Ashihara, S ^{[1
]}

Kako, S ^{[1
]}

Arakawa, Y ^{[1
]}

Shimura, T ^{[1
]}

Kuroda, K ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Structure dependent absorption spectrum changes in In0.10Ga0.90N thin films of different thickness (5.5,, 17, 34, and 66 nm) are investigated by nondegenerate femtosecond pump and probe spectroscopy at room temperature. These spectrum changes are caused by excitonic absorption quenching and screening of internal piezoelectric fields by photo-induced carriers. Both fast (500 ps) and slow (100 mus) temporal behaviors are. observed in differential absorption spectra. Localized carriers in indium-rich regions and/or carriers captured in midgap traps are considered to keep screening the internal filed and to maintain absorption spectrum changes much longer than the photoluminescence lifetimes.

引用

页码：256 / 257

页数：2

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