Behavior of hydrogen in excimer laser annealing of hydrogen-modulation-doped amorphous silicon layer

被引：6
|
作者：
Heya, Akira [1 ]
Serikawa, Tadashi [2 ]
Kawamoto, Naoya [3 ]
Matsuo, Naoto
机构：
[1] Univ Hyogo, Himeji, Hyogo 6712280, Japan
[2] Osaka Univ, Osaka 5670047, Japan
[3] Yamaguchi Univ, Ube, Yamaguchi 7558611, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 03期
关键词：
excimer laser annealing; hydrogen-modulation-doped amorphous silicon; nucleation; recombination energy; polycrystalline silicon;
D O I：
10.1143/JJAP.47.1853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel crystallization method for a low-temperature process is proposed, called "excimer laser annealing (ELA) of amorphous silicon (a-Si) with a hydrogen (H) modulation-doped layer" (ELHMD). The effects of H on low-energy crystallization by conventional ELA and ELHMD were investigated. The properties of polycrystalline silicon (poly-Si) film were changed by adjusting the H concentration and H distribution in the a-Si film for low-laser-energy irradiation. The recombination energy of H from the SiH2 bond enhances crystal nucleation during Si melting. Film exfoliation caused by H-2 bursts can be suppressed and high-quality crystal grains are obtained by ELHMD.
引用
收藏
页码：1853 / 1857
页数：5
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