A 16-Element Phased-Array CMOS Transmitter with Variable Gain Controlled Linear Power Amplifier for 5G New Radio

被引：32

作者：

Cho, Yunsung ^{[1
]}

Lee, Woojae ^{[1
]}

Park, Hyun-chul ^{[1
]}

Park, Byungjoon ^{[1
]}

Lee, Jeong Ho ^{[1
]}

Kim, Jihoon ^{[1
]}

Lee, Jooseok ^{[1
]}

Kim, Seokhyeon ^{[1
]}

Park, Jaehong ^{[1
]}

Park, Sangyong ^{[1
]}

An, Kyu Hwan ^{[1
]}

Son, Juho ^{[1
]}

Yang, Sung-Gi ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Suwon, South Korea

来源：

2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2019年

关键词：

28GHz; 5G; beamforming; mm-wave; phased array; transceiver; transmitter; TRANSCEIVER;

D O I：

10.1109/rfic.2019.8701791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 28-GHz 16-element phased-array transmitter for the fifth-generation (5G) new radio (NR) applications, focusing on the power amplifier (PA). The IC was fabricated using a 28-nm bulk CMOS technology with a flip-chip package, and evaluated with 5G NR signal having an 800-MHz total bandwidth. Each channel of the 16 phased-array transmitter has a 16 dBm output at 1-dB compression point and a large gain range from 24 to 63 dB. The full 16-element array achieves an average output power of 18 dBm with a record-level system error vector magnitude (EVM) of less than-33.5 dB (<2.1%) at a total power consumption of 1.63 W (102 mW of per channel) including all biases, digital control, and power-management- unit (PMU) blocks, over the frequency band from 26.5 to 29.5 GHz.

引用

页码：247 / 250

页数：4

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