Substrate dependence of adlayer optical response in reflectance anisotropy spectroscopy

被引:45
|
作者
Cole, RJ [1 ]
Frederick, BG [1 ]
Weightman, P [1 ]
机构
[1] Univ Liverpool, Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England
关键词
D O I
10.1116/1.581464
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Reflectance anisotropy spectroscopy (RAS) offers extreme surface sensitivity and can be used to study gas-solid and solid-liquid interfaces. Although the technique has already made a considerable contribution to in situ monitoring of the epitaxial growth of semiconductors, its impact has thus far been Limited by difficulties in interpreting experimental results. In particular, RAS spectra are related to both Delta epsilon(2)' and Delta epsilon(2)'', the real and imaginary parts of the surface dielectric anisotropy, with weighting factors determined by the complex dielectric function of the substrate. Here RAS calculations are performed for a variety of substrates assuming a model overlayer dielectric anisotropy. Three distinct regimes of behavior are observed: RAS spectra can resemble either Delta epsilon(2)', Delta epsilon(2)'' or -Delta epsilon(2)'' (or some combination of the three) depending on the substrate and the photon energy. It is therefore crucial to properly account for these substrate effects if RAS is to be used to determine the azimuthal orientation of adsorbates or to Study the symmetries of surface states, for example. Similar considerations also apply to the related technique of surface differential reflectance. The Fresnel-based theoretical method used here and the substrate optical functions presented should serve as a useful database for future work as RAS is applied to new systems. (C) 1998 American Vacuum Society. [S0734-2101 (98)05605-X].
引用
收藏
页码:3088 / 3095
页数:8
相关论文
共 50 条
  • [41] Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy
    P. Kurpas
    A. Oster
    M. Weyers
    A. Rumberg
    K. Knorr
    W. Richter
    Journal of Electronic Materials, 1997, 26 : 1159 - 1163
  • [42] Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSe
    Gnoth, DN
    Poole, IB
    Ng, TL
    Evans, DA
    Maung, N
    Williams, JO
    Wright, AC
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 198 - 202
  • [43] Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth
    Bussetti, G.
    Cirilli, S.
    Violante, A.
    Chiostri, V.
    Goletti, C.
    Chiaradia, P.
    Sassella, A.
    Campione, M.
    Raimondo, L.
    Braga, D.
    Borghesi, A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 1029 - 1034
  • [44] Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface
    Berkovits, V. L.
    Kosobukin, V. A.
    Ulin, V. P.
    Gordeeva, A. B.
    Petrov, V. N.
    JETP LETTERS, 2014, 98 (10) : 614 - 618
  • [45] Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy
    Morrice, DE
    Farrell, T
    Joyce, TB
    Chalker, PR
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 460 - 463
  • [46] Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy
    Lastras-Martinez, A.
    Guevara-Macias, L. E.
    Santiago-Garcia, J. G.
    Ortega-Gallegos, J.
    Ruiz-Alvarado, I. A.
    Martinez-Espinosa, R.
    Ariza-Flores, D.
    Castro-Garcia, R.
    Lopez-Estopier, R. E.
    Balderas-Navarro, R. E.
    Lastras-Martinez, L. F.
    APPLIED OPTICS, 2020, 59 (13) : D39 - D42
  • [47] Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry
    Zettler, JT
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1997, 35 (01): : 27 - 98
  • [48] Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy
    Kurpas, P
    Oster, A
    Weyers, M
    Rumberg, A
    Knorr, K
    Richter, W
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) : 1159 - 1163
  • [49] Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys
    Goletti, C.
    Fazi, L.
    Tisbi, E.
    Bonanni, B.
    Placidi, E.
    Arciprete, F.
    APPLIED PHYSICS LETTERS, 2022, 120 (03)
  • [50] Bilipid membrane phase characterization by reflectance anisotropy spectroscopy (RAS)
    Favero, P. P.
    Ferraz, A. C.
    Baptista, Mauricio S.
    Miotto, R.
    NANOSCALE IMAGING, SENSING, AND ACTUATION FOR BIOMEDICAL APPLICATIONS X, 2013, 8594