The overprints produced in inkjet technology with graphene oxide dispersion are presented. The graphene oxide ink is developed to be fully compatible with standard industrial printers and polyester substrates. Post-printing chemical reduction procedure is proposed, which leads to the restoration of electrical conductivity without destroying the substrate. The presented results show the outstanding potential of graphene oxide for rapid and cost efficient commercial implementation to production of flexible electronics. Properties of graphene-based electrodes are characterized on the macro- and nano-scale. The observed nano-scale inhomogeneity of overprints' conductivity is found to be essential in the field of future industrial applications. (C) 2015 AIP Publishing LLC.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Liu, Y.
Huang, L.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Huang, L.
Guo, G. L.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Guo, G. L.
Ji, L. C.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Ji, L. C.
Wang, T.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Wang, T.
Xie, Y. Q.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Xie, Y. Q.
Liu, F.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Liu, F.
Liu, A. Y.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Giesbers, A. J. M.
Bouten, P. C. P.
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Bouten, P. C. P.
Cillessen, J. F. M.
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Cillessen, J. F. M.
van der Tempel, L.
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
van der Tempel, L.
Klootwijk, J. H.
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Klootwijk, J. H.
Pesquera, A.
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Graphenea SA, A75022608 Tolosa Hiribidea 76, Donostia San Sebastian 20018, SpainPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Pesquera, A.
Centeno, A.
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Graphenea SA, A75022608 Tolosa Hiribidea 76, Donostia San Sebastian 20018, SpainPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Centeno, A.
Zurutuza, A.
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Graphenea SA, A75022608 Tolosa Hiribidea 76, Donostia San Sebastian 20018, SpainPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
Zurutuza, A.
Balkenende, A. R.
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Philips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, NetherlandsPhilips Res, Photon Mat & Devices, High Tech Campus 4, NL-5656 AE Eindhoven, Netherlands
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Univ Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, FranceUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Aliprandi, Alessandro
Moreira, Tiago
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Univ Nova Lisboa, Fac Ciencias & Tecnol, REQUIMTE, LAQV,Dept Quim, P-2829516 Monte De Caparica, Portugal
Ynvisible, Rua Mouzinho de Albuquerque 7, P-2070104 Cartaxo, PortugalUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Moreira, Tiago
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Anichini, Cosimo
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Stoeckel, Marc-Antoine
Eredia, Matilde
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Univ Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, FranceUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Eredia, Matilde
Sassi, Ugo
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Nokia Bell Labs, Broers Bldg, Cambridge CB3 0FA, EnglandUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Sassi, Ugo
Bruna, Matteo
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Nokia Bell Labs, Broers Bldg, Cambridge CB3 0FA, EnglandUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Bruna, Matteo
Pinheiro, Carlos
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Ynvisible, Rua Mouzinho de Albuquerque 7, P-2070104 Cartaxo, PortugalUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Pinheiro, Carlos
Laia, Cesar A. T.
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Univ Nova Lisboa, Fac Ciencias & Tecnol, REQUIMTE, LAQV,Dept Quim, P-2829516 Monte De Caparica, PortugalUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France
Laia, Cesar A. T.
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Bonacchi, Sara
Samori, Paolo
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Univ Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, FranceUniv Strasbourg, CNRS, ISIS UMR 7006, 8 Allee Gaspard Monge, F-67000 Strasbourg, France