Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

被引：68
|
作者：
Ouvrard, A [1 ]
Garnache, A
Cerutti, L
Genty, F
Romanini, D
机构：
[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, CNRS, UMR5507, F-34095 Montpellier, France
[2] RIBER SA, Rueil Malmaison, France
[3] Univ Grenoble 1, CNRS, UMR5588, Spectrometrie Phys Lab, F-38041 Grenoble, France
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 10期
关键词：
infrared spectroscopy; quantum-well lasers; semiconductor lasers; surface-emitting lasers;
D O I：
10.1109/LPT.2005.856341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a comparison between two kinds of single-frequency Sb-based semiconductor VCSELs operating at 2.3 mu m in continuous-wave regime at room temperature. These lasers are studied in view of application to spectroscopy or trace gas detection. Both are based on a molecular beam epitaxy grown half-VCSEL. In the first configuration, a dielectric mirror is deposited on top to form a microcavity, while in the second a concave mirror is used to form an external cavity. The external cavity VCSEL exhibits 5-mW output power, a narrow linewidth (< < 20 kHz), and 50-GHz continuous frequency tunability.
引用
收藏
页码：2020 / 2022
页数：3
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