Fully Integrated Broad-Band High Power Frequency Comb Based on a Multimode Gain Chip

被引：0
|
作者：
Gil-Molina, Andres [1 ]
Antman, Yair [1 ,2 ]
Westreich, Ohad [1 ]
Ji, Xingchen [1 ]
Gaeta, Alexander L. [2 ]
Lipson, Michal [1 ]
机构：
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We generate a Kerr frequency comb in a SiN ring spanning over 150nm with 23mW pump power. Self-injection locking of a multi-mode chip-based gain allows access to high pump power while maintaining single mode operation. (C) 2021 The Author(S)
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页数：2
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