InGaAs/GaAs ring-like nanostructures grown by droplet epitaxy using molecular beam epitaxy

被引：0
|
作者：
Pankaow, Naraporn [1 ]
Panyakeow, Somsak [1 ]
Ratanathammaphan, Somchai [1 ]
机构：
[1] Chulalongkorn Univ, Dept Elect Engn, Bangkok 10330, Thailand
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-assembled InGaAs ring-shape nanostructures on GaAs were fabricated by dropletepitaxy technique. Depenence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. Photoluminescence results confirmed the high quality of nanocrystal.
引用
收藏
页码：182 / 185
页数：4
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